The observation window and the statistical modeling of RTN in time and frequency domain. (December 2021)

• Record Type: Journal Article
• Authors: Wirth, Gilson
• Is Part Of: Solid-state electronics. Volume 186(2021)
• Publication Date: 2021-12
• Subjects: Low-frequency noise -- Random telegraph noise (RTN) -- Charge trapping -- Time dependent variability -- Jitter; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2021.108140
• Languages: English
• ISSNs: 0038-1101

Abstract

Highlights: Modeling the role of the observation window on MOSFET performance variability. Variability induced by single trap and multiple traps is discussed. Relation between time and frequency domain is discussed. Modeling parameters are the same in both time and frequency domain. Experimental results are presented. Assessing trap time constant distribution helps interpreting experimental results. Abstract: Charge trapping is studied in the context of random telegraph noise (RTN) and low-frequency noise (1/ f noise), aiming unified statistical modeling. Analytical formulations for 1/ f noise (frequency domain) and RTN (time domain) have been derived, using a single modeling framework, where model parameters are the same in frequency and time domain. The modeling addresses the time dependent variability in the electrical behavior of MOSFETs, discussing the variability due to a single trap and the ensemble of traps. In the work here presented we detail the role of the observation window, in both time and frequency domain. We discuss how it impacts the variance of drain current (or threshold voltage) measured over time, and the number of observable traps in a given time window or frequency window. Besides analytical modeling, experimental results are presented and discussed.