Cite
MLA Citation
M. Aouad et al.. “Poisson-Schrödinger simulation and analytical modeling of inversion charge in FDSOI MOSFET down to 0 K – Towards compact modeling for cryo CMOS application.” Solid-state electronics, vol. 186, 2021, p. . http://access.bl.uk/ark:/81055/vdc_100145647053.0x000056