Small signal model and analog performance analysis of negative capacitance FETs. (December 2021)

• Record Type: Journal Article
• Authors: Eslahi, Hossein; Hamilton, Tara J.; Khandelwal, Sourabh
• Is Part Of: Solid-state electronics. Volume 186(2021)
• Publication Date: 2021-12
• Subjects: Negative-capacitance FET (NCFET) -- Ferroelectric layer -- Radio frequency (RF) -- Integrated circuits -- CMOS technology; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2021.108161
• Languages: English
• ISSNs: 0038-1101

Abstract

Abstract: In this paper, a small-signal model of Negative Capacitance FETs (NCFETs) is developed and the analog performance of NCFETs is studied using the developed model. A new ferroelectric factor K is introduced to capture the ferroelectric gain in NCFETs as compared to traditional small signal MOSFET/FinFET models. Using our new NCFET small-signal model, we show analog design trade-offs between various analog benchmarks such as gain, bandwidth, cut-off frequency, and linearity. Additionally, the developed model is used to demonstrate trade-offs in NCFET analog performance as ferroelectric parameters are changed. Results show that if pushed for a higher intrinsic gain via thicker Fe layers in NCFETs, the linearity of the device suffers. This reveals inherent device level trade-off in NCFETs for analog circuit performance.