CMOS back-end-of-line compatible ferroelectric tunnel junction devices. (December 2021)

• Record Type: Journal Article
• Authors: Deshpande, Veeresh; Nair, Keerthana Shajil; Holzer, Marco; Banerjee, Sourish; Dubourdieu, Catherine
• Is Part Of: Solid-state electronics. Volume 186(2021)
• Publication Date: 2021-12
• Subjects: Back-end-of-line -- Ferroelectric tunnel junction -- Hafnium zirconium oxide -- Neuromorphic; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2021.108054
• Languages: English
• ISSNs: 0038-1101

Abstract

Highlights: Solid solutions of hafnium dioxide can enable CMOS integration of ultra-low power ferroelectric devices. Hafnium dioxide ferroelectrics based FTJs based on can be integrated into the back-end-of-line (BEOL) of CMOS technology. W-Hf0.5 Zr0.5 O2 -Al2 O3 -TiN FTJ stacks featuring 400 °C annealing have similar performance has high temperature annealings. Abstract: Ferroelectric tunnel junction devices based on ferroelectric thin films of solid solutions of hafnium dioxide can enable CMOS integration of ultra-low power ferroelectric devices with potential for memory and emerging computing schemes such as in-memory computing and neuromorphic applications. In this work, we present ferroelectric tunnel junctions based on Hf0.5 Zr0.5 O2 with materials and processes compatible with CMOS back-end-of-line integration. We show a device architecture based on W-Hf0.5 Zr0.5 O2 -Al2 O3 -TiN stacks featuring low temperature annealing at 400° with performance comparable to those obtained with higher temperature annealing conditions.