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APA Citation
Mulaosmanovic, H., Kleimaier, D., Dünkel, S., Beyer, S., Mikolajick, T., & Slesazeck, S. (2021). ferroelectric transistors with asymmetric double gate for memory window exceeding 12 V and disturb-free read. Nanoscale, 13(38), 16258–16266. http://access.bl.uk/ark:/81055/vdc_100144530232.0x000032