Cite
HARVARD Citation
Mulaosmanovic, H. et al. (2021). Ferroelectric transistors with asymmetric double gate for memory window exceeding 12 V and disturb-free read. Nanoscale. 13 (38), pp. 16258-16266. [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Mulaosmanovic, H. et al. (2021). Ferroelectric transistors with asymmetric double gate for memory window exceeding 12 V and disturb-free read. Nanoscale. 13 (38), pp. 16258-16266. [Online].