Light-induced nonvolatile resistive switching in Cs0.15FA0.85PbI3-XBrX perovskite-based memristors. (December 2021)

• Record Type: Journal Article
• Authors: Li, Yongfei; Cheng, Pengpeng; Zhou, Luyan; Liu, Zehan; Zuo, Zhiyuan; Zhan, Xuepeng; Chen, Jiezhi
• Is Part Of: Solid-state electronics. Volume 186(2021)
• Publication Date: 2021-12
• Subjects: Organic–inorganic halide perovskites -- Memristor -- Resistive switching -- Illumination -- Logic operation; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2021.108166
• Languages: English
• ISSNs: 0038-1101

Abstract

Graphical abstract: Highlights: The perovskite memoristors showed non-volatile light-induced resistive performance. The proportion of halogen content plays a critical role in the resistance states. The logic operation were achieved using optical and electrical excitation as inputs. Abstract: In the age of information, Internet of Things (IoT) has emerged as a technological revolution due to its potential of integrating with artificial intelligence. However, the data processing speed under the von Neumann architecture has gradually shown its difficulties to meet the application requirements of the IoT. The memristor, as a promising candidate for breaking through the bottleneck of the von Neumann architecture, has attracted considerable interest. Furthermore, optical signals are also an indispensable channel of information in IoT applications. To integrate the perception of light information and rapid data processing, high-performance optoelectronic memristors are highly desired. With fascinating optoelectronic characteristics, the emerging perovskite memristors show potential to realize such integrated applications. In this report, alternatively reproducible resistance state transition under either electrical or optical stimulus had been observed in Cs0.15 FA0.85 PbI3-X BrX -based memristors. Unlike light-assisted resistance transition, the switching process can be completely triggered by external light. Hybrid logical operations are also observed in such devices due to the unique photoelectric response. The results demonstrate that the Cs0.15 FA0.85 PbI3-X BrX -based optoelectronic memristor has great potential to be used in optoelectronic information integration and provides possibilities for smart sensors in IoT applications.