Cite
HARVARD Citation
Chen, J. et al. (2021). A GaN-on-Si quasi-vertical Schottky barrier diode with enhanced performance using fluorine ion-implanted field rings. Applied physics express. p. . [Online].
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Chen, J. et al. (2021). A GaN-on-Si quasi-vertical Schottky barrier diode with enhanced performance using fluorine ion-implanted field rings. Applied physics express. p. . [Online].