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APA Citation
Daigo, Y., Ishii, S., & Kobayashi, T. (2019). impacts of surface C/Si ratio on in-wafer uniformity and defect density of 4H-SiC homo-epitaxial films grown by high-speed wafer rotation vertical CVD. Japanese journal of applied physics, 58, . http://access.bl.uk/ark:/81055/vdc_100081893024.0x000064