Cite
HARVARD Citation
Vohra, A. et al. (2019). Low temperature epitaxial growth of Ge:B and Ge0.99Sn0.01:B source/drain for Ge pMOS devices: in-situ and conformal B-doping, selectivity towards oxide and nitride with no need for any post-epi activation treatment. Japanese journal of applied physics. p. . [Online].