Cite
HARVARD Citation
Feng, Z. et al. (2021). Ferroelectric‐Like Behavior in TaN/High‐k/Si System Based on Amorphous Oxide. Advanced Electronic Materials. p. n/a. [Online].
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Feng, Z. et al. (2021). Ferroelectric‐Like Behavior in TaN/High‐k/Si System Based on Amorphous Oxide. Advanced Electronic Materials. p. n/a. [Online].