TCAD modeling of bias temperature instabilities in SiC MOSFETs. (November 2021)

• Record Type: Journal Article
• Authors: Carangelo, G.; Reggiani, S.; Consentino, G.; Crupi, F.; Meneghesso, G.
• Is Part Of: Solid-state electronics. Volume 185(2021)
• Publication Date: 2021-11
• Subjects: SiC -- PBTI -- TCAD -- eNMP -- Defect configurations; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2021.108067
• Languages: English
• ISSNs: 0038-1101

Abstract

Highlights: TCAD modeling of BTI in SiC-MOSFET. SiO2 /SiC interface charge trapping. Extended non-radiative multiphonon theory. Reliability issues in SiC-MOSFET. Abstract: TCAD simulations of SiC power MOSFETs have been performed to study the dependence of positive-bias temperature instability (PBTI) on temperature and electric field. The model used to describe the kinetics of the transition rates between neutral and charged traps is the extended Non-Radiative Multi Phonon (eNMP). Connections between oxide defect configurations at the interface with SiC substrate have been made. Validation against experiments is shown.