Enhanced dielectric properties of poly(arylene ether nitrile) composite films employing MoS2-based semiconductors for organic film capacitor applications. (December 2021)
- Record Type:
- Journal Article
- Title:
- Enhanced dielectric properties of poly(arylene ether nitrile) composite films employing MoS2-based semiconductors for organic film capacitor applications. (December 2021)
- Main Title:
- Enhanced dielectric properties of poly(arylene ether nitrile) composite films employing MoS2-based semiconductors for organic film capacitor applications
- Authors:
- Feng, Mengna
Ma, Deyu
Chen, Xuanrong
Wang, Pan
Lin, Jing - Abstract:
- Abstract: Polymer-based dielectric composites are potential substitute dielectrics for organic thin film capacitors. In this work, the exfoliated molybdenum disulfide (MoS2 ) was functionalized by mussel-inspired poly(dopamine) (PDA) to form core-shell structured composites (MoS2 @PDA) under easy-handling and eco-friendly conditions, and then as filler incorporated into poly(arylene ether nitrile) (PEN) matrix. The interfacial interaction and dispersion of MoS2 @PDA in PEN matrix were improved by the strong adhesion of PDA interlayer to exfoliated MoS2, π-π conjugation and hydrogen bond interactions, which formed by the polar nitrile group of PEN and catechol groups of PDA. Therefore, the PEN/MoS2 @PDA composite films exhibited enhanced dielectric constant, synchronously maintaining better flexibility, thermal stability and the same level of dielectric loss with PEN. Particularly, the addition of 20 wt% MoS2 @PDA into PEN matrix leaded to substantial growth of dielectric constant up to 12.9 at 1 kHz, while the PEN matrix was just 4.2. Meanwhile, the dielectric composites maintained relatively low dielectric loss of 0.022 at 1 kHz, which was ascribed to the improved compatibility and interfacial interaction between filler and PEN. All in all, a eco-friendly and easy-handling strategy was provided to tune the dielectric constant and dielectric loss of semiconductor/polymer composites, which has great potential to promote the development of dielectric in the fields of organicAbstract: Polymer-based dielectric composites are potential substitute dielectrics for organic thin film capacitors. In this work, the exfoliated molybdenum disulfide (MoS2 ) was functionalized by mussel-inspired poly(dopamine) (PDA) to form core-shell structured composites (MoS2 @PDA) under easy-handling and eco-friendly conditions, and then as filler incorporated into poly(arylene ether nitrile) (PEN) matrix. The interfacial interaction and dispersion of MoS2 @PDA in PEN matrix were improved by the strong adhesion of PDA interlayer to exfoliated MoS2, π-π conjugation and hydrogen bond interactions, which formed by the polar nitrile group of PEN and catechol groups of PDA. Therefore, the PEN/MoS2 @PDA composite films exhibited enhanced dielectric constant, synchronously maintaining better flexibility, thermal stability and the same level of dielectric loss with PEN. Particularly, the addition of 20 wt% MoS2 @PDA into PEN matrix leaded to substantial growth of dielectric constant up to 12.9 at 1 kHz, while the PEN matrix was just 4.2. Meanwhile, the dielectric composites maintained relatively low dielectric loss of 0.022 at 1 kHz, which was ascribed to the improved compatibility and interfacial interaction between filler and PEN. All in all, a eco-friendly and easy-handling strategy was provided to tune the dielectric constant and dielectric loss of semiconductor/polymer composites, which has great potential to promote the development of dielectric in the fields of organic thin film capacitors. Graphical abstract: Image 1 Highlights: The core-shell structured MoS2 @PDA was prepared by bio-inspired method. The PDA interlayer improved compatibility and interfacial interaction of composites. The PEN-based composites showed high dielectric constant and reasonably low dielectric loss. The dielectric enhancement mechanism was explained systematically. … (more)
- Is Part Of:
- Materials science in semiconductor processing. Volume 136(2021)
- Journal:
- Materials science in semiconductor processing
- Issue:
- Volume 136(2021)
- Issue Display:
- Volume 136, Issue 2021 (2021)
- Year:
- 2021
- Volume:
- 136
- Issue:
- 2021
- Issue Sort Value:
- 2021-0136-2021-0000
- Page Start:
- Page End:
- Publication Date:
- 2021-12
- Subjects:
- Semiconductor/polymer composites -- Core-shell structure -- Molybdenum disulfide -- Dielectric properties
Semiconductors -- Periodicals
Integrated circuits -- Materials -- Periodicals
Semiconducteurs -- Périodiques
Circuits intégrés -- Matériaux -- Périodiques
Electronic journals
621.38152 - Journal URLs:
- http://www.sciencedirect.com/science/journal/latest/13698001 ↗
http://www.elsevier.com/journals ↗ - DOI:
- 10.1016/j.mssp.2021.106127 ↗
- Languages:
- English
- ISSNs:
- 1369-8001
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 5396.440600
British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store - Ingest File:
- 19329.xml