Application of Cl2 for low temperature etch and epitaxy. (12th June 2019)

• Record Type: Journal Article
• Authors: Hikavyy, Andriy; Porret, Clement; Rosseel, Erik; Milenin, Alexey; Loo, Roger
• Is Part Of: Semiconductor science and technology. Volume 34:Number 7(2019)
• Publication Date: 2019-06-12
• Subjects: epitaxy -- etching -- Cl2 -- CMOS -- SiGe -- doping; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1361-6641/aafc93
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: In this work, two most typical applications of Cl2 etch relevant for sub-10 nm CMOS device production, namely sacrificial etch and selective deposition are presented. It is shown that Si0.7 Ge0.3 sacrificial etch with Cl2 is possible in the temperature range of 350 °C–400 °C when He is used as a carrier gas. This temperature range can be further lowered when He is substituted with N2 . Use of N2 also allows Si etch at very low temperatures (∼400 °C) which are not accessible for etching with HCl and potentially can be used for sacrificial etch of Si and Si-based epitaxial selective growth processes. Furthermore, a combination of Cl2 with high order Si and Ge precursors allowed development of cyclic selective epitaxial processes at temperatures as low as 400 °C with active dopant concentrations of ∼1 × 10 20 cm −3 for Si0.7 Ge0.3 :B and ∼3 × 10 19 cm −3 for Si0.7 Ge0.3 :P.