Low temperature annealing of nanocrystalline Si paste for pn junction formation. (15th November 2021)

• Record Type: Journal Article
• Authors: Kuboki, Yusuke; Zhu, Huan; Sakamoto, Morihiro; Matsumoto, Hiroshige; Teii, Kungen; Kato, Yoshimine
• Is Part Of: Materials science in semiconductor processing. Volume 135(2021)
• Publication Date: 2021-11-15
• Subjects: Si paste -- pn junction -- Aluminum-induced crystallization (AIC) -- Oxidation -- Crystallization -- Annealing; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2021.106093
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: Low temperature annealing of p- and n-type Si paste films consisting of nanocrystal Si particles coated on Al substrates was investigated for application to low cost large-area electronic devices such as solar cells. This process based on aluminum-induced-crystallization enabled one to enhance recrystallization of the Si paste films with reduction of residual tensile stress while suppressing oxidation greatly even at low temperatures (400–550 °C), as confirmed by Raman spectroscopy, X-ray diffraction, and Fourier-transform infrared spectroscopy. pn homo-junction diodes were fabricated successfully using a p/n-type double layer Si paste film and even an n-type single layer Si paste film on Al substrates by annealing at temperatures less than 550 °C. The current-voltage characteristic of the diode using a p/n-type double layer Si paste film showed rectification with the on/off current ratio of about 3200 and the reverse current density of the order of 10 −9 A/cm 2 at room temperature.