Local activation of light-induced degradation in co-doped boron-phosphorus silicon: Evidence of defect diffusion phenomena. (15th November 2021)

• Record Type: Journal Article
• Authors: Najjar, M.; Dridi Rezgui, B.; Bouaicha, M.; Palais, O.; Bessais, B.; Aouida, S.
• Is Part Of: Materials science in semiconductor processing. Volume 135(2021)
• Publication Date: 2021-11-15
• Subjects: Silicon solar cell -- Light induced degradation -- Carrier lifetime; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2021.106104
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: This study is interested in the local activation of Light-induced degradation (LID) defect in highly co-doped silicon wafers with boron and phosphorus. For this purpose, the experiments are focused on measuring the minority carrier lifetime before and after LID activation via a mapping technique. The LID defect density exhibits a Gaussian distribution centered on the excitation point of the laser beam; the intensity of the Gaussian distribution of the LID defect varies with the concentration of the co-dopants. The lifetime of the minority carriers decreases in all-silicon sample regions, while the excitation laser beam focuses on an area of approximately one mm 2 . This observation indicates that LID defects are activated even in the unexcited areas of silicon wafers, suggesting a LID diffusion phenomenon from the laser excitation point to the whole silicon wafer. We deduce that a high phosphorus doping level in silicon wafers leads to a significant reduction in the LID effect.