Lattice matched Volmer–Weber growth of Fe3Si on GaAs(001)—the influence of the growth rate. (29th October 2019)

• Record Type: Journal Article
• Authors: Jenichen, B; Cheng, Z; Hanke, M; Herfort, J; Trampert, A
• Is Part Of: Semiconductor science and technology. Volume 34:Number 12(2019)
• Publication Date: 2019-10-29
• Subjects: Volmer–Weber growth -- molecular beam epitaxy -- metal on semiconductor -- ferromagnetic film; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1361-6641/ab4c79
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: We investigate the formation of lattice matched single-crystalline Fe3 Si/GaAs(001) ferromagnet/semiconductor hybrid structures by Volmer–Weber island growth, starting from the epitaxial growth of isolated Fe3 Si islands up to the formation of continuous films as a result of island coalescence. We find coherent defect-free layers exhibiting compositional disorder near the Fe3 Si/GaAs—interface for higher growth rates, whereas they are fully ordered for lower growth rates.