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HARVARD Citation
Torrente, G. et al. (2015). Physically-based extraction methodology for accurate MOSFET degradation assessment. Microelectronics and reliability. 55 (9), pp. 1417-1421. [Online].
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Torrente, G. et al. (2015). Physically-based extraction methodology for accurate MOSFET degradation assessment. Microelectronics and reliability. 55 (9), pp. 1417-1421. [Online].