Ultra wide voltage range consideration of reliability-aware STT magnetic flip-flop in 28 nm FDSOI technology. Issue 9 (August 2015)

• Record Type: Journal Article
• Authors: Cai, H.; Wang, Y.; Naviner, L.A.B.; Zhao, W.S.
• Is Part Of: Microelectronics and reliability. Volume 55:Issue 9/10(2015)
• Page Start: 1323
• Page End: 1327
• Publication Date: 2015-08
• Subjects: Magnetic tunnel junction -- STT-MFF -- Reliability -- FDSOI -- Ultra wide voltage range; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2015.06.023
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: We investigate stochastic and deterministic reliability problems in the hybrid magnetic tunnel junction (MTJ)/MOS circuit which is implemented with ultra thin body and buried oxide (UTBB) fully depleted silicon-on-insulator (FDSOI) technology. A spin torque transfer (STT) magnetic flip-flop (MFF) is designed with ultra wide voltage range, with 0.5 V to 1.2 V sense/read voltage, and 0.95 V to 2 V writing voltage, by using an industrial 28 nm design kit and a physics-based STT-MTJ compact model. MFF performance can be improved with forward body bias (FBB) technology. The reliability-aware study shows that variability induced read/write failure is more dominant compared with aging induced degradation. Reliability-aware design of STT-MFF is discussed by proper selection of operation voltage. Highlights: We investigate stochastic and deterministic reliability problems in hybrid MTJ/MOS circuit 28 nm spin torque transfer (STT) magnetic flip-flop (MFF) is designed with ultra wide voltage range by FDSOI technology Comparing with aging induced degradation, variability induced read/write failure is more dominant. Reliability-aware design of STT-MFF is discussed by proper selection of operation voltage.