Compact thermal modeling of spin transfer torque magnetic tunnel junction. Issue 9 (August 2015)

• Record Type: Journal Article
• Authors: Wang, Y.; Cai, H.; Naviner, L.A.B.; Zhang, Y.; Klein, J.O.; Zhao, W.S.
• Is Part Of: Microelectronics and reliability. Volume 55:Issue 9/10(2015)
• Page Start: 1649
• Page End: 1653
• Publication Date: 2015-08
• Subjects: Spin transfer torque -- Magnetic tunnel junction -- High temperature impact -- Self-heating -- Temperature tolerance; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2015.06.029
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: Magnetic tunnel junction (MTJ) with spin transfer torque (STT) switching method features fast speed, low power, great scalability and high compatibility with conventional CMOS process. Nevertheless, its magnetic and electrical properties can be easily influenced by operation temperature and self-heating effect, which further results in performance degradation and reliability issues of MTJ based memories and logic circuits. This paper investigates the behaviors of MTJ under different temperatures and further proposes a model in consideration of temperature impact on performance of MTJ, which can be used to optimize the design of STT-MRAM in terms of dynamic operations and temperature tolerance. Highlights: Modeling of temperature impact on magnetic properties of magnetic tunnel junction (MTJ) High temperature behaviors of MTJ are taken into account. Self-heating effect of MTJ is included to improve the simulation accuracy. Temperature impact on writing/reading circuit of MTJ is investigated.