Temperature dependent current transport behavior of improved low noise NiGe schottky diodes for low leakage Ge-MOSFET. (22nd February 2019)

• Record Type: Journal Article
• Authors: Uddin, Wasi; Saleem Pasha, Mohd; Dhyani, Veerendra; Maity, Sarmistha; Das, Samaresh
• Is Part Of: Semiconductor science and technology. Volume 34:Number 3(2019)
• Publication Date: 2019-02-22
• Subjects: Schottky contact -- NiGe Schottky diode -- germanium MOSFET -- 1/f noise of Ge Schottky contact; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1361-6641/ab0317
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: In this letter, we report on improved low noise NiGe/n-Ge (100) Schottky barrier diodes (SBDs) fabricated by post annealing of sputtered Ni films on germanium substrates. The results of x-ray diffraction and Raman spectroscopy confirm the formation of NiGe phase at elevated temperatures. Electrical behaviour of the SBDs at different temperatures have been investigated and compared. Experimental results indicate the presence of barrier inhomogeneity and low temperature I–V measurements were performed and the effect of operating temperature on barrier height was studied. The Schottky barrier heights were calculated and compared using current-voltage and capacitance-voltage methods. A low frequency noise measurement on SBDs showed typical 1/f noise behaviour. Study shows that NiGe can be used as a contact material for low leakage Ge-MOSFET applications.