Liquid phase epitaxy growth and photoluminescence of InAs1−x−ySbxPy epilayer. (31st May 2019)

• Record Type: Journal Article
• Authors: Xie, Hao; Lin, Hongyu; Wang, Yang; Lu, Hongbo; Sun, Yan; Hao, Jiaming; Hu, Shuhong; Dai, Ning
• Is Part Of: Materials research express. Volume 6:Number 8(2019)
• Publication Date: 2019-05-31
• Subjects: semiconducting quaternary compounds -- liquid phase epitaxy -- high resolution x-ray diffraction -- Room temperature photoluminescence; Materials science -- Research -- Periodicals; Materials science -- Periodicals; 620.11
• DOI: 10.1088/2053-1591/ab2434
• Languages: English
• ISSNs: 2053-1591

Abstract

Abstract: An investigation was made into the liquid phase epitaxy growth and photoluminescence properties of InAs1−x−y Sbx Py epilayers. Details of the growth conditions and x-ray analysis were given, together with photoluminescence (PL) spectra measured at room temperature (RT). RT PL results indicate the good optical quality of InAs1−x−y Sbx Py epilayer. InAs1−x−y Sbx Py alloy with P content of 0.27 has a band gap of 0.48 eV that could be suitable for barrier layer in device grown by LPE.