Liquid phase epitaxy growth and photoluminescence of InAs1−x−ySbxPy epilayer. (31st May 2019) - Xie, Hao
Abstract: An investigation was made into the liquid phase epitaxy growth and photoluminescence properties of InAs1−x−y Sbx Py epilayers. Details of the growth conditions and x-ray analysis were given, together with photoluminescence (PL) spectra measured at room temperature (RT). RT PL results indicate the good optical quality of InAs1−x−y Sbx Py epilayer. InAs1−x−y Sbx Py alloy with P content of 0.27 has a band gap of 0.48 eV that could be suitable for barrier layer in device grown by LPE.