Cite
MLA Citation
Uiho Choi et al.. “Growth behavior of GaN on AlN for fully coalesced channel of AlN-based HEMT.” Japanese journal of applied physics, vol. 58, 2019, p. . http://access.bl.uk/ark:/81055/vdc_100143559544.0x000061
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Uiho Choi et al.. “Growth behavior of GaN on AlN for fully coalesced channel of AlN-based HEMT.” Japanese journal of applied physics, vol. 58, 2019, p. . http://access.bl.uk/ark:/81055/vdc_100143559544.0x000061