Cite
HARVARD Citation
Choi, U. et al. (2019). Growth behavior of GaN on AlN for fully coalesced channel of AlN-based HEMT. Japanese journal of applied physics. p. . [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Choi, U. et al. (2019). Growth behavior of GaN on AlN for fully coalesced channel of AlN-based HEMT. Japanese journal of applied physics. p. . [Online].