Cite
HARVARD Citation
Hirose, R. et al. (2019). Effect of ramping up rate on end of range defect in multielement molecular-ion (CH3O)-implanted silicon wafers. Japanese journal of applied physics. p. . [Online].
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Hirose, R. et al. (2019). Effect of ramping up rate on end of range defect in multielement molecular-ion (CH3O)-implanted silicon wafers. Japanese journal of applied physics. p. . [Online].