Ultrathin flexible thin film transistors with CYTOP encapsulation by debonding process. (13th June 2019)

• Record Type: Journal Article
• Authors: Kim, Jae Moon; Oh, Jongsu; Jung, Kyung-Mo; Park, KeeChan; Jeon, Jae-Hong; Kim, Yong-Sang
• Is Part Of: Semiconductor science and technology. Volume 34:Number 7(2019)
• Publication Date: 2019-06-13
• Subjects: organic TFTs -- free-standing structure -- ultrathin flexible electronics -- CYTOP encapsulation -- debonding process; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1361-6641/ab2201
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: We fabricated ultrathin flexible thin film transistors with hydrophobic encapsulation layer by debonding process. In the debonding process, to separate the transistors from the carrier glass in deionized (DI) water, a strong hydrophobic material such as CYTOP was used for encapsulation, thus increasing their resistance to moisture. PVA was used as a release layer and the debonding process was optimized to separate the carrier glass and the transistors. It was confirmed that water penetration into the device can be suppressed effectively when the CYTOP thickness is 800 nm. In addition, the electrical characteristics remained almost constant even in the presence of water for 50 min. The total thickness after debonding process was approximately 2 μ m. Waterproof experiments and debonding process were performed for a simple inverter circuit as well as a discrete device, and the operation and voltage gain of the inverter did not change when water was placed on the device or after debonding process. Finally, the flexibility was measured by transferring the device to a flexible PI substrate. Consequently, it was confirmed that degradation in the electrical properties was slightly up to a bending radius of 2.5 mm.