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APA Citation
Pantzas, K., Beaudoin, G., Bailly, M., Martin, A., Grisard, A., Dolfi, D., Mauguin, O., Largeau, L., Sagnes, I., & Patriarche, G. (2021). relaxation mechanism of GaP grown on 001 Si substrates: influence of defects on the growth of AlGaP layers on GaP/Si templates. Philosophical magazine, 101(20), 2189–2199. http://access.bl.uk/ark:/81055/vdc_100142331157.0x00001a