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HARVARD Citation
Pantzas, K. et al. (2021). Relaxation mechanism of GaP grown on 001 Si substrates: influence of defects on the growth of AlGaP layers on GaP/Si templates. Philosophical magazine. 101 (20), pp. 2189-2199. [Online].
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Pantzas, K. et al. (2021). Relaxation mechanism of GaP grown on 001 Si substrates: influence of defects on the growth of AlGaP layers on GaP/Si templates. Philosophical magazine. 101 (20), pp. 2189-2199. [Online].