Cite
HARVARD Citation
Sakurai, Y. et al. (2021). High Electron Mobility AlN on Sapphire (0001) with a Low Dislocation Density Prepared via Sputtering and High‐Temperature Annealing. Physica status solidi. 218 (16), p. n/a. [Online].
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Sakurai, Y. et al. (2021). High Electron Mobility AlN on Sapphire (0001) with a Low Dislocation Density Prepared via Sputtering and High‐Temperature Annealing. Physica status solidi. 218 (16), p. n/a. [Online].