High Electron Mobility AlN on Sapphire (0001) with a Low Dislocation Density Prepared via Sputtering and High‐Temperature Annealing. Issue 16 (17th August 2021)

• Record Type: Journal Article
• Authors: Sakurai, Yuya; Ueno, Kohei; Kobayashi, Atsushi; Uesugi, Kenjiro; Miyake, Hideto; Fujioka, Hiroshi
• Is Part Of: Physica status solidi. Volume 218:Issue 16(2021)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2021-08-17
• Subjects: Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.202170046
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : High Electron Mobility AlN In article number 2100074 by Hiroshi Fujioka and co‐workers, high electron mobility Si‐doped AlN on sapphire (0001) is prepared via the combination of pulsed sputtering deposition and high‐temperature annealing. The Si‐doped AlN with a dislocation density of 2.8 × 10 8 cm −2 yields high electron mobility of 141 cm 2 V −1 s −1 at room temperature, attributed to the reduction in the dislocation density and residual impurities.