Cite
HARVARD Citation
Henning, A. et al. (2021). Aluminum Oxide at the Monolayer Limit via Oxidant‐Free Plasma‐Assisted Atomic Layer Deposition on GaN. Advanced functional materials. p. n/a. [Online].
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Henning, A. et al. (2021). Aluminum Oxide at the Monolayer Limit via Oxidant‐Free Plasma‐Assisted Atomic Layer Deposition on GaN. Advanced functional materials. p. n/a. [Online].