Analytical modeling and simulation of a triple metal vertical TFET with hetero-junction gate stack. (September 2021)

• Record Type: Journal Article
• Authors: Gupta, Shilpi; Wairya, Subodh; Singh, Shailendra
• Is Part Of: Superlattices and microstructures. Volume 157(2021)
• Publication Date: 2021-09
• Subjects: Triple metal gate vertical TFET (TMG-VTFET) -- 2D analytical modeling -- Poisson equation -- Parabolic approximation -- Band to band tunneling -- Subthreshold slope (SS) -- Electric field -- Kane model; Superlattices as materials -- Periodicals; Microstructure -- Periodicals; Semiconductors -- Periodicals; Superréseaux -- Périodiques; Microstructure (Physique) -- Périodiques; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.spmi.2021.106992
• Languages: English
• ISSNs: 0749-6036

Abstract

Abstract: In this paper, a new 2D analytical model for surface potential of a gate stacked triple metal Vertical TFET with n + delta doped layer (δ-doped n + SiGe GS-TMG-VTFET) is presented. The parabolic approximation process is used to solve the Poisson equation in terms of channel surface potential and electrical field respectively. The proposed method consists of a dual modulation effect that controls the surface potential at both the interface of the source and drains with the channel. This structure comprises SiO2 and HfO2 as gate-stacked materials to extend the control of the gate terminal over the channel. In addition, the proposed TMG-VTFET outperforms the surface potential results in terms of input and output characteristics like gate-source voltage (VGS ) and drain-source voltage (VDS ), gate oxide, and SiGe mole fraction. Finally, we obtained the expression of the channel surface potential, which involves the biasing variation of source and drain terminal. Our proposed model is accounting the variable of kane model in respect to extract the drain current characteristics. It can be modeled by integrating band-to-band tunneling generation rate using suitable boundary conditions. Now, efficiency of the proposed model for both the surface potential and drain current has been confirmed by comparing its analytical outcomes with the TCAD results. Highlights of the paper: In this paper, we proposed and developed a new 2D analytical model of a triple metal Vertical TFET Gate stacked with n + SiGe delta-doped layer using two-dimensional Poisson's equations. Poisson's equation was solved using the parabolic approximation process to solve the channel surface potential and equivalent electric field. The most significant result is the creation of a new channel surface potential expression that can predict the effect of source-channel and drain-channel both the biasing. The Kane's Model is used to calculate the drain current by measuring the band-to-band tunneling generation rate.