Phase-gradient atomic layer deposition of TiO2 thin films by plasma-induced local crystallization. Issue 20 (15th October 2021)

• Record Type: Journal Article
• Authors: Go, Dohyun; Lee, Jaehyeong; Shin, Jeong Woo; Lee, Sungje; Kang, Wangu; Han, Jeong Hwan; An, Jihwan
• Is Part Of: Ceramics international. Volume 47:Issue 20(2021)
• Page Start: 28770
• Page End: 28777
• Publication Date: 2021-10-15
• Subjects: Plasma-enhanced atomic layer deposition (PEALD) -- Crystallization -- High-k thin film -- Optical properties -- Electrical properties; ALD Atomic layer deposition -- CET Capacitance equivalent thickness -- PEALD Plasma-enhanced atomic layer deposition -- PG Phase-gradient -- XPS X-ray photoelectron spectroscopy -- XRD X-ray diffraction -- XRR X-ray reflectivity; Ceramics -- Periodicals; Céramique industrielle -- Périodiques; Ceramics; Periodicals; Electronic journals; 666
• DOI: 10.1016/j.ceramint.2021.07.037
• Languages: English
• ISSNs: 0272-8842

Abstract

Abstract: Atomic layer deposition (ALD) is a thin-film fabrication method that can be used to deposit films with precise thickness controllability and uniformity. The low deposition temperature of ALD, however, often interrupts the facile crystallization of films, resulting in inferior optical and electrical properties. In this study, the extremely localized crystallization of TiO2 thin films was demonstrated by per-cycle plasma treatment during the plasma-enhanced ALD process. By layering crystalline and amorphous films, a phase-gradient TiO2 film with precisely modulated optical and electrical properties was fabricated. Moreover, the ratio between the amorphous and crystalline layer thicknesses for a high dielectric constant and low leakage current density was optimized.