Cite
HARVARD Citation
Shin, N. et al. (2021). Electronic Doping and Enhancement of n‐Channel Polycrystalline OFET Performance through Gate Oxide Modifications with Aminosilanes. Advanced materials interfaces. 8 (16), p. n/a. [Online].
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Shin, N. et al. (2021). Electronic Doping and Enhancement of n‐Channel Polycrystalline OFET Performance through Gate Oxide Modifications with Aminosilanes. Advanced materials interfaces. 8 (16), p. n/a. [Online].