Electronic Doping and Enhancement of n‐Channel Polycrystalline OFET Performance through Gate Oxide Modifications with Aminosilanes. Issue 16 (26th July 2021)
- Record Type:
- Journal Article
- Title:
- Electronic Doping and Enhancement of n‐Channel Polycrystalline OFET Performance through Gate Oxide Modifications with Aminosilanes. Issue 16 (26th July 2021)
- Main Title:
- Electronic Doping and Enhancement of n‐Channel Polycrystalline OFET Performance through Gate Oxide Modifications with Aminosilanes
- Authors:
- Shin, Nara
Schellhammer, Karl Sebastian
Lee, Min Ho
Zessin, Jakob
Hambsch, Mike
Salleo, Alberto
Ortmann, Frank
Mannsfeld, Stefan C. B. - Abstract:
- Abstract: Self‐assembled monolayers (SAMs) are widely employed in organic field‐effect transistors to modify the surface energy, surface roughness, film growth kinetics, and electrical surface potential of the gate oxide to control the device's operating voltage. In this study, amino‐functionalized SAM molecules are compared to pure alkylsilane SAMS in terms of their impact on the electrical properties of organic field‐effect transistors, using the n‐type polycrystalline small molecule semiconductor material N, N ′‐dioctyl‐3, 4, 9, 10‐perylenedicarboximide (PTCDI‐C8). In order to understand the electronic impact of the amino groups, the effect of both the number of amino‐containing functional groups and the SAM molecular length are systematically studied. Though amino‐functionalized SAM materials have been studied previously, this study is, for the first time, able to shed light on the nature of the doping effect that occurs when the gate oxide is treated with polar aminosilane materials. By a comprehensive theoretical study of the interface on the molecular level, it is shown that the observed shift in the threshold voltage is caused by free charges, which are attracted to the PTCDI‐C8 and are stabilized there by protonated aminosilanes. This attraction and the voltage shift can be systematically tuned by varying the length of the neutral terminal chain of the aminosilane. Abstract : A set of amino‐functionalized self‐assembled monolayers (SAMs) are studied regarding theirAbstract: Self‐assembled monolayers (SAMs) are widely employed in organic field‐effect transistors to modify the surface energy, surface roughness, film growth kinetics, and electrical surface potential of the gate oxide to control the device's operating voltage. In this study, amino‐functionalized SAM molecules are compared to pure alkylsilane SAMS in terms of their impact on the electrical properties of organic field‐effect transistors, using the n‐type polycrystalline small molecule semiconductor material N, N ′‐dioctyl‐3, 4, 9, 10‐perylenedicarboximide (PTCDI‐C8). In order to understand the electronic impact of the amino groups, the effect of both the number of amino‐containing functional groups and the SAM molecular length are systematically studied. Though amino‐functionalized SAM materials have been studied previously, this study is, for the first time, able to shed light on the nature of the doping effect that occurs when the gate oxide is treated with polar aminosilane materials. By a comprehensive theoretical study of the interface on the molecular level, it is shown that the observed shift in the threshold voltage is caused by free charges, which are attracted to the PTCDI‐C8 and are stabilized there by protonated aminosilanes. This attraction and the voltage shift can be systematically tuned by varying the length of the neutral terminal chain of the aminosilane. Abstract : A set of amino‐functionalized self‐assembled monolayers (SAMs) are studied regarding their impact on the properties of organic field‐effect transistors (OFETs), analyzing both the number of amino groups and the SAM molecular length. By correlating the experimental data with theory, it is shown that the resulting OFET threshold voltage shifts are caused by mobile charges donated from the aminosilanes. … (more)
- Is Part Of:
- Advanced materials interfaces. Volume 8:Issue 16(2021)
- Journal:
- Advanced materials interfaces
- Issue:
- Volume 8:Issue 16(2021)
- Issue Display:
- Volume 8, Issue 16 (2021)
- Year:
- 2021
- Volume:
- 8
- Issue:
- 16
- Issue Sort Value:
- 2021-0008-0016-0000
- Page Start:
- n/a
- Page End:
- n/a
- Publication Date:
- 2021-07-26
- Subjects:
- aminosilanes -- charge transfer -- gate oxide modification -- organic field‐effect transistors -- PTCDI‐C8 morphology
Materials science -- Periodicals
620.11 - Journal URLs:
- http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)2196-7350 ↗
http://onlinelibrary.wiley.com/ ↗ - DOI:
- 10.1002/admi.202100320 ↗
- Languages:
- English
- ISSNs:
- 2196-7350
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 0696.898450
British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store - Ingest File:
- 18567.xml