Cite
MLA Citation
P Murugapandiyan et al.. “Breakdown voltage enhancement of gate field plate Al0.295Ga0.705N/GaN HEMTs.” International journal of electronics, vol. 108, no. 8, 2021, pp. 1273–1287. http://access.bl.uk/ark:/81055/vdc_100139924890.0x00005f