Cite
HARVARD Citation
Murugapandiyan, P. et al. (2021). Breakdown voltage enhancement of gate field plate Al0.295Ga0.705N/GaN HEMTs. International journal of electronics. 108 (8), pp. 1273-1287. [Online].
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Murugapandiyan, P. et al. (2021). Breakdown voltage enhancement of gate field plate Al0.295Ga0.705N/GaN HEMTs. International journal of electronics. 108 (8), pp. 1273-1287. [Online].