Ultraviolet, visible and near infrared photoresponse of SiO2/Si/SiO2 multilayer system into a MOS capacitor. (1st November 2021)

• Record Type: Journal Article
• Authors: González-Flores, K.E.; Frieiro, J.L.; Horley, P.; Pérez-García, S.A.; Palacios-Huerta, L.; Moreno, M.; López-Vidrier, J.; Hernández, S.; Garrido, B.; Morales-Sánchez, A.
• Is Part Of: Materials science in semiconductor processing. Volume 134(2021)
• Publication Date: 2021-11-01
• Subjects: Photoresponse -- Spectral response -- External quantum efficiency -- Silicon nanoclusters -- Silicon rich oxide (SiOx) -- Multilayers; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2021.106009
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: In this paper, we report on the photoresponse properties of a SiO2 /Si/SiO2 multilayer (ML) system deposited at 500 °C and integrated into a metal-oxide-semiconductor structure (Al/ML/p-Si) without any further thermal annealing. High contents of elemental Si (Si 0 ) revealed by the XPS measurements suggests the formation of amorphous Si-nanoclusters (a-Si ncls) within the ML. Dark and illuminated I–V curves of the device indicate its sensitivity to ultraviolet, visible and near infrared light under applied bias and at 0 V. In addition, we observed variation of the spectral response and the external quantum efficiency as a function of the electrode size. At 0 V, the device illuminated with a wavelength at 550 nm exhibits a maximum external quantum efficiency of 0.95% and a spectral response of 4.1 mA/W. This photoresponse has been ascribed to photon absorption in SiO2 sub-band states created by the a-Si ncls and defects formed by the excess Si inside the SiO2 /Si/SiO2 multilayers.