Tuning the dielectric behavior and energy storage properties of Mn/Co co-doped ZnO. (1st November 2021)
- Record Type:
- Journal Article
- Title:
- Tuning the dielectric behavior and energy storage properties of Mn/Co co-doped ZnO. (1st November 2021)
- Main Title:
- Tuning the dielectric behavior and energy storage properties of Mn/Co co-doped ZnO
- Authors:
- Ahsan, Hafiz Muhammad
Lal, Kanhya
Saleem, Murtaza
Mustafa, Ghulam M.
Khan, Muhammad Ahmad
Haidyrah, Ahmed S.
Atiq, Shahid - Abstract:
- Abstract: The synthesis of pure ZnO along with nominal Mn and Co co-doping using a time-efficient and cost-effective wet chemical route to explore their detailed dielectric response is reported. Structural investigations revealed the development of hexagonal crystal symmetry of pristine ZnO. When 5% Mn is substituted, a slight decrease in lattice parameters is observed. However, Co doping did not affect the crystal symmetry as well as lattice parameters. The morphological study exposed that Mn and Co incorporation in ZnO significantly affected the shape, size, and distribution of particles. The maximum porosity is noticed when 5% of Mn is doped in pure ZnO. The elemental analysis confirmed the presence of all elements according to their stoichiometric formula. The relatively higher value of the dielectric constant is noticed in the present case while the value of loss tangent is explained based on oxygen vacancies generated during the auto-combustion process. Short-range electron transport is distinguished from long-range on the basis of relaxation peaks present in electric modulus. The effective contribution of conducting grains and insulating grain boundaries in different frequency regimes is explained by their impedance response. Highlights: Using a facile wet-chemical route, a series of Mn and Co co-doped ZnO is synthesized. Structural analysis revealed the stability of hexagonal crystal structure. Particles with hexagonal and spherical shape are witnesses withAbstract: The synthesis of pure ZnO along with nominal Mn and Co co-doping using a time-efficient and cost-effective wet chemical route to explore their detailed dielectric response is reported. Structural investigations revealed the development of hexagonal crystal symmetry of pristine ZnO. When 5% Mn is substituted, a slight decrease in lattice parameters is observed. However, Co doping did not affect the crystal symmetry as well as lattice parameters. The morphological study exposed that Mn and Co incorporation in ZnO significantly affected the shape, size, and distribution of particles. The maximum porosity is noticed when 5% of Mn is doped in pure ZnO. The elemental analysis confirmed the presence of all elements according to their stoichiometric formula. The relatively higher value of the dielectric constant is noticed in the present case while the value of loss tangent is explained based on oxygen vacancies generated during the auto-combustion process. Short-range electron transport is distinguished from long-range on the basis of relaxation peaks present in electric modulus. The effective contribution of conducting grains and insulating grain boundaries in different frequency regimes is explained by their impedance response. Highlights: Using a facile wet-chemical route, a series of Mn and Co co-doped ZnO is synthesized. Structural analysis revealed the stability of hexagonal crystal structure. Particles with hexagonal and spherical shape are witnesses with decreasing particle size as we proceeded in series. Frequency and composition dependent dielectric constant, electric modulus and impedance behavior is explained. … (more)
- Is Part Of:
- Materials science in semiconductor processing. Volume 134(2021)
- Journal:
- Materials science in semiconductor processing
- Issue:
- Volume 134(2021)
- Issue Display:
- Volume 134, Issue 2021 (2021)
- Year:
- 2021
- Volume:
- 134
- Issue:
- 2021
- Issue Sort Value:
- 2021-0134-2021-0000
- Page Start:
- Page End:
- Publication Date:
- 2021-11-01
- Subjects:
- Sol‒gel auto-combustion -- X-ray diffraction -- Nanoparticles -- Dielectric relaxation -- Impedance analysis
Semiconductors -- Periodicals
Integrated circuits -- Materials -- Periodicals
Semiconducteurs -- Périodiques
Circuits intégrés -- Matériaux -- Périodiques
Electronic journals
621.38152 - Journal URLs:
- http://www.sciencedirect.com/science/journal/latest/13698001 ↗
http://www.elsevier.com/journals ↗ - DOI:
- 10.1016/j.mssp.2021.105977 ↗
- Languages:
- English
- ISSNs:
- 1369-8001
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 5396.440600
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