Influences of alkali incorporation and electrodeposited metal layer on formation of MoS2 in CZTS thin films. (1st November 2021)

• Record Type: Journal Article
• Authors: Wang, Jiao; Wang, Yanping; Li, Haoran; Zhao, Aimei; Li, Bing; Bi, Jinlian; Li, Wei
• Is Part Of: Materials science in semiconductor processing. Volume 134(2021)
• Publication Date: 2021-11-01
• Subjects: Na and K-doping -- Sol-gel -- Electrodeposition -- MoS2 -- CZTS thin Films; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2021.105943
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: In this work, the CZTS absorbers were prepared by sol-gel method and the combination of electrodeposition and sol-gel method. The influence of Na and/or K incorporation on the thickness of MoS2 during sulfurization process was investigated. XRD, Raman, and SEM characterizes presented that K incorporation could help to suppress the formation of MoS2, which induced to reduce the thickness of MoS2 . Additionally, Na and/or K doping could eliminate the existence of the voids and improve the quality of CZTS thin film. Besides, the CZTS absorbers fabricated by the combination process of electrodeposition and sol-gel shown a better adhesion than that fabricated by sol-gel method.