Cite
HARVARD Citation
Lin, C. et al. (n.d.). Resistance switching behavior of ZnO resistive random access memory with a reduced graphene oxide capping layer. Japanese journal of applied physics. p. . [Online].
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Lin, C. et al. (n.d.). Resistance switching behavior of ZnO resistive random access memory with a reduced graphene oxide capping layer. Japanese journal of applied physics. p. . [Online].