Resistance switching behavior of ZnO resistive random access memory with a reduced graphene oxide capping layer. (23rd March 2015)

• Record Type: Journal Article
• Authors: Lin, Cheng-Li; Chang, Wei-Yi; Huang, Yen-Lun; Juan, Pi-Chun; Wang, Tse-Wen; Hung, Ke-Yu; Hsieh, Cheng-Yu; Kang, Tsung-Kuei; Shi, Jen-Bin
• Is Part Of: Japanese journal of applied physics. Volume 54:Number 4(2015:Apr.)Supplement
• Publication Date: 2015-03-23
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/JJAP.54.04DJ08
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: In this work, we investigate the characteristics of ZnO resistive random access memory (RRAM) with a reduced graphene oxide (rGO) capping layer and the polarity effect of the SET/RESET bias on the RRAM. The rGO film insertion enhances the stability of the current–voltage ( I – V ) switching curve and the superior resistance ratio (∼10 5 ) of high-resistance state (HRS) to low-resistance state (LRS). Using the appropriate polarity of the SET/RESET bias applied to the rGO-capped ZnO RRAM enables the oxygen ions to move mainly at the interface of the rGO and ZnO films, resulting in the best performance. Presumably, the rGO film acts as an oxygen reservoir and enhances the easy in and out motion of the oxygen ions from the rGO film. The rGO film also prevents the interaction of oxygen ions and the Al electrode, resulting in excellent performance. In a pulse endurance test, the rGO-capped ZnO RRAM reveals superior endurance of up to 10 8 cycles over that of the ZnO RRAM without rGO insertion (10 6 cycles).