Effect of anionic bath temperature on morphology and photo electrochemical properties of Cu2O deposited by SILAR. (December 2018)

• Record Type: Journal Article
• Authors: Baig, Faisal; Khattak, Yousaf Hameed; Soucase, Bernabé Marí; Beg, Saira; Ullah, Shafi
• Is Part Of: Materials science in semiconductor processing. Volume 88(2018)
• Page Start: 35
• Page End: 39
• Publication Date: 2018-12
• Subjects: Solar cell -- Cu2O -- Thin film -- Nano wire -- SILAR; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2018.07.031
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: Successive ionic layer adsorption and reaction (SILAR) technique with different anionic bath temperatures (40 °C, 60 °C, 80 °C) was used to deposit Cu 2 O films on ITO substrate. Studies carried out and reported in this work are crystal structure of Cu 2 O (XRD), transmittance, optical band gap, surface morphological of Cu 2 O and photocatalytic activity of deposited Cu 2 O films. The structural study revealed that the crystalline quality was gradually enhanced with increase in bath temperature and preferential orientation of crystal structure is along (111) that is cubic nature. Optical study for Cu 2 O film shows that anionic bath temperature influences the transmittance and optical band gap of deposited Cu 2 O samples. SEM images revealed that the morphology for Cu 2 O film deposited on ITO substrate were of nanowire like structures and with increase in temperature of anionic bath wire structure grows more compact. Photoelectrochemical (PEC) studies revealed that Cu 2 O deposited at 80 °C shows high photocurrent and good stability.