All metal oxide-based transparent and flexible photodetector. (December 2018)

• Record Type: Journal Article
• Authors: Abbas, Sohail; Kumar, Mohit; Kim, Joondong
• Is Part Of: Materials science in semiconductor processing. Volume 88(2018)
• Page Start: 86
• Page End: 92
• Publication Date: 2018-12
• Subjects: Metal oxide -- Transparent -- Flexible -- Photodetector; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2018.07.027
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: We demonstrate the fabrication and characterization of flexible and transparent photodetector based on conformally grown Agx O/TiO2 /ITO layers on polyethylene terephthalate substrate. Initially, the thickness of Agx O and ITO layers were optimized via deposition time to match layers crystallinity with fixed intermediate TiO2 layer, for better optical and electrical properties. The highly transparent (> 70%) and flexible device presents the high-preforming responses over the broadband light. Under UV illumination, it showed a high responsivity (323 mA/W) and detectivity (4.2 × 10 8 Jones). Similarly, a noise equivalent power of 2.3 × 10 −9 W/Hz 1/2 is obtained, which confirmed its capability to detect light at nanowatt level. Moreover, mechanical flexibility test was performed for the flexible and transparent Agx O/TiO2 /ITO device. It was found that the device is robust to have good optoelectronic performances even after 500 no. of bending cycles. Thus, the utilization of earth abundant metal-oxides can facilitate the flexibility, durability and transparency of next generation optoelectronic devices.