Degenerate and non-degenerate In2O3 thin films by pulsed electron beam deposition. (December 2018)

• Record Type: Journal Article
• Authors: Nistor, M.; Gherendi, F.; Perrière, J.
• Is Part Of: Materials science in semiconductor processing. Volume 88(2018)
• Page Start: 45
• Page End: 50
• Publication Date: 2018-12
• Subjects: Thin films -- Indium oxide -- Electrical transport -- Quantum corrections -- Optical properties -- Pulsed electron beam deposition; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2018.07.024
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: Pulsed electron beam deposition (PED) was used to grow indium oxide thin films on c-cut sapphire single crystalline substrates between room temperature and 500 °C under oxygen gas. A slight difference in oxygen pressure during the PED growth (from 2 × 10 −2 to 1.3 × 10 −2 mbar) has strong effects on the electrical and optical film properties. The indium oxide thin films grown in these conditions changed from a non-degenerate semiconducting behaviour (at 2 × 10 −2 mbar) to a degenerate semiconductor one (at 1.3 × 10 −2 mbar), with a metal-insulator transition at 149 K. This crossover from strong to weak localization, evidenced in the temperature dependent resistivity curves, may be due to the effects of a structural disorder in such films. The direct optical band gap was estimated from transmission spectra taking into account non-degenerate/degenerate behaviour.