Black phosphorus junctions and their electrical and optoelectronic applications. (August 2021)

• Record Type: Journal Article
• Authors: Deng, Ningqin; Tian, He; Zhang, Jian; Jian, Jinming; Wu, Fan; Shen, Yang; Yang, Yi; Ren, Tian-Ling
• Is Part Of: Journal of semiconductors. Volume 42:Number 8(2021)
• Publication Date: 2021-08
• Subjects: black phosphorus -- photodetector -- heterostructure -- homojunction -- 2D material; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1674-4926/42/8/081001
• Languages: English
• ISSNs: 1674-4926

Abstract

Abstract: Black phosphorus (BP), an emerging two-dimensional material, is considered a promising candidate for next-generation electronic and optoelectronic devices due to in-plane anisotropy, high mobility, and direct bandgap. However, BP devices face challenges due to their limited stability, photo-response speed, and detection range. To enhance BP with powerful electrical and optical performance, the BP heterostructures can be created. In this review, the state-of-the-art heterostructures and their electrical and optoelectronic applications based on black phosphorus are discussed. Five parts introduce the performance of BP-based devices, including black phosphorus sandwich structure by hBN with better stability and higher mobility, black phosphorus homojunction by dual-gate structure for optical applications, black phosphorus heterojunction with other 2D materials for faster photo-detection, black phosphorus heterojunction integration with 3D bulk material, and BP via As-doping tunable bandgap enabling photo-detection up to 8.2 μ m. Finally, we discuss the challenges and prospects for BP electrical and optical devices and applications.