Proton and light ions induced SEU effect in a SOI SRAM with gold plated lid. (September 2019)

• Record Type: Journal Article
• Authors: Gao, J.; Zhang, Q.; Li, B.; Xi, K.; Li, B.; Liu, F.; Wang, C.; Liu, H.; Zhao, F.; Zeng, C.; Luo, J.; Han, Z.; Liu, J.; Guo, G.
• Is Part Of: Microelectronics and reliability. Volume 100/101(2019)
• Publication Date: 2019-09
• Subjects: Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2019.06.043
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: Impact of metal lid in the circuit package was usually neglected during the evaluation, which could probably underestimate the circuit sensitivity to single event upset due to nuclear reaction in metal lid. In this paper, the effect of gold lid on a 0.13 μm SOI SRAM circuit was studied by both using accelerator test and Geant4 software simulation. The simulation and experiment results show that the contribution of the gold foil to the SEU effect of low energy protons or C + ions was not obvious. When the energy of protons or C + ions increased to 200 MeV, the SEU enhancement effect of gold foil on the circuit could not be ignored.