Terrestrial neutron-induced single events in GaN. (September 2019)

• Record Type: Journal Article
• Authors: Munteanu, D.; Autran, J.L.
• Is Part Of: Microelectronics and reliability. Volume 100/101(2019)
• Publication Date: 2019-09
• Subjects: Gallium nitride -- Single events -- Atmospheric neutrons -- Neutron interactions -- Geant4 -- Radiation transport -- Random-walk drift-diffusion; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2019.06.049
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: We study the physical mechanisms of single event production in GaN wide-bandgap semiconductor subjected to atmospheric high-energy (>1 MeV) neutron irradiation. The interactions of incident neutrons with the target material are investigated with Geant4 and the transport of the deposited charge simulated using our random-walk drift-diffusion (RWDD) modeling approach in a generic reversely biased bulk junction. Highlights: Interactions of atmospheric neutrons with GaN materials are investigated using Geant4 simulations. Secondaries produced in GaN are characterized in terms of energy, linear energy transfer and range. Single event transients induced by alpha particles in GaN bulk junction are simulated. Implications for the occurrence of single events in GaN material with respect to Si are discussed.