Cite
APA Citation
Aguiar, Y., Wrobel, F., Guagliardo, S., Autran, J., Leroux, P., Saigné, F., Touboul, A., & Pouget, V. (2019). radiation hardening efficiency of gate sizing and transistor stacking based on standard cells. Microelectronics and reliability, 100, . http://access.bl.uk/ark:/81055/vdc_100098075888.0x000052